1673-159X

CN 51-1686/N

铝靶电流对TiAlN薄膜组织结构与性能的影响

The Effect of Al Target Current on the Microstructure and Properties of TiAlN Film

  • 摘要: 采用非平衡磁控溅射离子镀技术在YG6硬质合金表面沉积TiAlN薄膜,研究Al靶的溅射电流对TixAl1-xN薄膜组织结构与性能的影响。利用X线衍射仪、扫描电子显微镜和显微硬度仪等分析仪器对制备的TixAl1-xN薄膜的相结构、表面形貌和显微硬度进行测试分析。测试结果表明:膜层中存在Ti3AlN、AlN相,且Ti3AlN沿(220)晶面择优取向。SEM测试表明,随Al靶功率的提高,膜层晶粒结构变得更致密。显微硬度仪测得薄膜平均硬度最高可达2 980 HV。

     

    Abstract: TiAlN films were deposited by unbalanced magnetron sputtering method on cemented carbide YG6 substrates. Effect of Al target current on the phase, surface topography and micro-hardness was investigated with XRD, SEM, micro-hardness instruments and so on. The XRD patterns of the films confirmed the formation of Ti3AlN phase and AlN phase, and the coatings showed a fairly strong (220) preferred orientation. The SEM imagines revealed that the grain structure of the films became denser with the increase in Al target current. The average micro-hardness value reached 2 980HV.

     

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