A位Y3+替代α-BZN陶瓷结构及介电性能研究
Structure and Dielectric Properties of Y3+ Doped α-BZN based Ceramics
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摘要: 采用传统的固相反应法制备了(Bi1.5-xYxZn0.5)(Zn0.5Nb1.5) O7(BYZN, 0≤x≤0.2 mol)陶瓷, 借助XRD、SEM和Agilent 4284A测试仪, 研究了A位替代对α-BZN结构和介电性能的影响。研究表明: 当掺杂量x(Y3+) < 0.15 mol时, 样品相结构中没有出现其他杂相, 为单一立方焦绿石相; 随掺杂离子的进一步增加, 样品中出现少量第二相。陶瓷样品的晶粒尺寸和介电性能随着Y3+掺杂量的增加而呈现有规律的变化; 低温介电弛豫峰的峰形逐渐宽化; x(Y3+)≤0.15 mol时, 1 MHz下弛豫峰峰值温度Tm由-117℃逐渐增加到-108℃。Abstract: Ceramics (Bi1. 5-xYxZn0. 5) (Zn0. 5Nb1. 5) O7(BYZN, 0≤x≤0. 2mol) was prepared by a solid phase reaction. The structure and dielectric properties of Y3+ doped on A site were studied by X-ray diffraction method and scanning electron microscope and Agilent 4284A testing analyzer. The samples exhibited a single cubic pyrochlore phase when Y3+ substitution x < 0. 15 mol, and the second phase appeared when X3+ content increased. The grain size and dielectric properties of BYZN samples changed regularly with the increasing of doping substitution. The peak temperature of dielectric relaxtion moved from -117 ℃ to -108 ℃ at 1MHz and the εr-T peak was decreased and broaden when substitution x≤0. 15 mol.